IDT70V631S10PRFG【PDF 7/23 页】IC SRAM 4MBIT 10NS 128TQFP

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IDT70V631S

High-Speed 3.3V 256K x 18 Asynchronous Dual-Port Static RAM

Recommended Operating

Temperature and Supply Voltage (1)

Industrial and Commercial Temperature Ranges

Recommended DC Operating

Conditions with V DDQ at 2.5V

Ambient

Symbol

Parameter

Min.

Typ.

Max.

Unit

Grade

Temperature

GND

V DD

V DD

Core Supply Voltage

3.15

3.3

3.45

V

0 C to +70 C

-40 C to +85 C

Commercial

Industrial

O O

O O

0V

0V

3.3V + 150mV

3.3V + 150mV

V DDQ

V SS

I/O Supply Voltage

Ground

(3)

2.4

0

2.5

0

2.6

0

V

V

Input High Voltage

NOTE:

1. This is the parameter T A . This is the "instant on" case temperature.

5622 tbl 04

V IH

(3)

(Address & Control Inputs)

1.7

____

V DDQ + 100mV

(2)

V

-0.5

V IH

V IL

Input High Voltage - I/O (3)

Input Low Voltage

1.7

(1)

____

____

V DDQ + 100mV (2)

0.7

V

V

NOTES:

5622 tbl 06

Absolute Maximum Ratings (1)

Symbol Rating Commercial

& Industrial

Unit

1. V IL > -1.5V for pulse width less than 10 ns.

2. V TERM must not exceed V DDQ + 100mV.

3. To select operation at 2.5V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to V IL (0V), and V DDQX for that port must be supplied

as indicated above.

V TERM (2)

Terminal Voltage

-0.5 to +4.6

V

with Respect to

GND

T BIAS

T STG

Temperature

Under Bias

Storage

-55 to +125

-65 to +150

o

o

C

C

Recommended DC Operating

Conditions with V DDQ at 3.3V

Temperature

Symbol

Parameter

Min.

Typ.

Max.

Unit

I OUT

NOTES:

DC Output Current

50

mA

5622 tbl 05

V DD

V DDQ

Core Supply Voltage

(3)

I/O Supply Voltage

3.15

3.15

3.3

3.3

3.45

3.45

V

V

V DDQ + 150mV

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may

cause permanent damage to the device. This is a stress rating only and functional

operation of the device at these or any other conditions above those indicated

in the operational sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect reliability.

2. V TERM must not exceed V DD + 150mV for more than 25% of the cycle time or

V SS

V IH

V IH

Ground

Input High Voltage

(Address & Control Inputs) (3)

Input High Voltage - I/O (3)

0

2.0

2.0

0

____

____

0

(2)

V DDQ + 150mV (2)

V

V

V

4ns maximum, and is limited to < 20mA for the period of V TERM > V DD + 150mV.

V IL

Input Low Voltage

-0.3

(1)

____

0.8

V

NOTES:

1. V IL > -1.5V for pulse width less than 10 ns.

2. V TERM must not exceed V DDQ + 150mV.

5622 tbl 07

Capacitance (1)

(T A = +25°C, F = 1.0MH Z ) TQFP ONLY

3. To select operation at 3.3V levels on the I/Os and controls of a given port, the

OPT pin for that port must be set to V IH (3.3V), and V DDQX for that port must be

supplied as indicated above.

Symbol

C IN

C OUT (3)

Parameter

Input Capacitance

Output Capacitance

Conditions (2)

V IN = 3dV

V OUT = 3dV

Max.

8

10.5

Unit

pF

pF

NOTES:

5622 tbl 08

1. These parameters are determined by device characterization, but are not

production tested.

2. 3dV references the interpolated capacitance when the input and output switch

from 0V to 3V or from 3V to 0V.

3. C OUT also references C I/O .

7

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